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| schottky barrier diode features z low forward voltage drop z guard ring construction for transi z high conductance - z also available in lead free version marking: b0520ws: sd b0530ws: se B0540WS: sf maximum ratings @t a =25 parameter symbol b0520ws b0530ws B0540WS unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage reverse voltage (dc) v r(rms) 14 21 28 v average rectified output current i o 0.5 a forward current surge peak i fsm 5.5 a power dissipation p d 200 mw thermal resistance junction to ambient r ja 625 /w junction temperature t j 150 storage temperature t stg -65~+150 voltage rate of change dv/dt 1000 v/ s electrical characteristics @t a =25 parameter symbol b0520ws b0530ws B0540WS unit conditions 20 -- -- i r =250 a -- 30 -- i r =500 a minimum reverse breakdown voltage v (br)r -- -- 40 v i r =20 a v f1 0.3 0.36 -- i f =0.1a v f2 0.385 0.45 0.510 i f =0.5a forward voltage v f3 -- -- 0.62 v i f =1a i r1 75 -- -- v r =10v reverse current i r2 -- 80 -- a v r =15v i r3 250 100 10 v r =20v i r4 -- 500 -- v r =30v reverse current i r5 -- -- 20 a v r =40v capacitance between terminals c t 170 170 170 pf v r =0,f=1mhz sod-323 b0520ws/b0530ws/B0540WS ent protection 1 date:2011/05 www.htsemi.com semiconductor jinyu + -
typical characteristics b0520ws/b0530ws/B0540WS 2 date:2011/05 www.htsemi.com semiconductor jinyu |
Price & Availability of B0540WS
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